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In this paper we propose a novel oxide-based RRAM stack using hygroscopic oxide, doped Gd-O, as resistive switching layer integrated in a CMOS friendly flow. Operating at 50µA, the stack features large resistive window (>x100) and superior endurance lifetime (10^12) which is to our knowledge the record lifetime for CMOS compatible RRAM devices. Detailed benchmarking between conventional oxide-based...
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