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We demonstrate slotted tuneable lasers addressing each 50GHz grid channel in the lower half (18nm) of the ITU C-band. An accurate time domain simulation is developed to model the device behaviour.
Permutation entropy is evaluated as a quality measure for sequences of pulses from several laser systems. Assessing the complexity on different timescales can indicate when the dynamics changes from irregular to fairly regular pulsed states.
Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a bio template and neutral beam etching, and produced 8-nm-thick GaAs...
A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.
This study investigates the effect of laser facet reflectivity modification on the leakage current and internal efficiency for interband cascade lasers (ICLs) emitting in mid-infrared region. Mid-infrared region of the spectrum (3µm to 5µm) is comprised of two atmospheric transmission windows as well as several absorption bands of greenhouse gasses and water and offers applications in free-space communications,...
Micro disks and micro rings with various active region and design are studied. Lasing up to 100°C is demonstrated in 2 µm micro rings with InAs/InGaAs quantum dots. A technique for selecting modes in micro disk lasers is presented.
We are working on utilizing the 103 enhancement observed for no degenerate two-photon absorption in semiconductors to obtain two-photon gain in inverted media. Experiments along with analysis for GaAs show potential for gain greater than losses.
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