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We report on the large Kerr induced wavelength shift observed in our hydrogenated amorphous silicon microresonators and demonstrate their use for all-optical modulation and switching on picosecond time scales with only subpicojoule pulse energies.
We demonstrate the possibility of forming ultra-compact, field-configurable, and low-power resonance-based passive integrated photonic structures based on charge accumulation in a high-quality multilayer material platform comprising Si/SiO2/Si layers prepared through direct bonding of SOI wafers.
All-optical magnetic switching is demonstrated in a Tb-Fe thin film with a conventional laser oscillator instead of a complex and expensive amplifier system. Overheating is prevented by a SiO2/Si substrate as an efficient heat sink.
We experimentally demonstrate that graphene can strongly modulate the scattered light from Fano-resonant plasmonic metasurfaces. The Modulation depth of 1000% is achieved at around 7µm as the graphene carrier concentration changes.
We demonstrate that record-high extinction-ratio of 50 dB is achievable in a 2×2 Si optical switch by making use of a variable splitter. The proposed switch will enable such high extinction-ratio even in volume production using standard CMOS fabrication facilities.
We present mechanically-tunable microdisk resonators using electrostatic actuation in double-layer-SOI material platform. The possibility of achieving resonance wavelength shifts as-high-as 5.5 nm/volt and 1.35 nm/nm over a wavelength tuning range of 35 nm is demonstrated.
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