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In this paper a variability-aware compact modeling strategy is presented for 20-nm bulk planar technology, taking into account the critical dimension long-range process variation and local statistical variability. Process and device simulations and statistical simulations for a wide range of combinations of L and W are carefully carried out using a design of experiments approach. The variability aware...
Recently, we proposed a non-volatile magnetic flip flop featuring a very small footprint. We studied its operational limits and current dependent characteristics. Since flip flops are commonly operated by clocked signals, their operation is time critical and the knowledge and understanding of their switching behavior is essential. In this work we study the dependence of the proposed flip flop on its...
Spin-resolved conductivities in magnetic tunnel junctions are calculated using a semiempirical tight-binding model and non-equilibrium Green's functions. The performance of half-metallic electrodes is studied by comparing conventional Fe-MgO-Fe structures to Co2FeAl-MgO-Co2FeAl structures. The results show higher tunneling magnetoresistance and resistance-area product for Co2FeAl devices across a...
0.5V operation and power-gating ability of nonvolatile SRAM (NV-SRAM) cell using pseudo-spin-FinFETs (PS-FinFETs) are investigated. The cell is configured so as to achieve a minimum occupied-area design, i.e., all the FinFETs used in the cell are designed with a single fin channel. The 0.5V operations are analyzed from various static noise margins (SNMs) for the normal operation and nonvolatile power-gating...
It has been proposed that superfluid excitonic condensates may be possible in dielectrically separated graphene layers or other two-dimensional materials. This possibility was the basis for the proposed ultra-low power Bilayer pseudoSpin Field-effect Transistor (BiSFET). Previously, we developed an atomistic tight-binding quantum transport simulator, including the non-local exchange interaction, and...
Improvements in electrostatic channel control allow FinFETs and trigate FETs to extend Moore's law down to gate lengths of 15–20nm. Further scaling may require the better control that is provided by multigate devices. Using multigate FET architectures, gate length scaling down to 5 and 3 nm has been demonstrated experimentally and theoretically, respectively. At these dimensions, quantum confinement...
The paper presents a method for quantum transport simulations in nanowire (NW) MOSFETs with inelastic scattering processes incorporated. An atomistic tight-binding Hamiltonian with realistic electron-phonon interaction is transformed into an equivalent low-dimensional transport model which can be easily used in full-scaled NEGF simulations. The utility of the method is demonstrated by computing IV...
A three-dimensional self-consistent non-equilibrium Green's function approach is used to investigate the influence of phonon scattering in single dopant nanowire transistors. Phonon interactions are described within the self-consistent Born approximation in which both acoustic and optical phonons are included. Transport properties are then analyzed in the ballistic and scattering regimes. Ballistic...
Sensitivity of Phosphorus dopant placement to the channel size of highly doped silicon nanowires is studied using a 10-band sp3 d5 s∗ tight-binding approach coupled to self-consistent simulations. Extending the simulation scope to realistically sized nanowires, we observed that uniform doping does not necessarily reduce the channel energy compared to surface-oriented doping when the diameter of a...
We have investigated the influence of carrier traps on device characteristics in TFTs. In particular, our focus was given on transient characteristics influenced by carrier trapping during device operations. A compact model for circuit simulation of TFTs has been developed by considering the time constant of the trapping. The model was verified with measured frequency dependent TFT characteristics.
In this paper, we discuss how to implement the self heating and aging models with TMI. Various examples about self heating and aging simulations with TMI methodology are shown in this paper. Without trading-off the accuracy, the one with proposed TMI approach for self heating simulations takes much shorter simulation time.
Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method...
The electrical performance and reliability of a through-silicon via is investigated through two-dimensional and three-dimensional simulations. Due to the large differences in material thicknesses present in the structures, a 3D simulation is often not feasible. The thermo-mechanical stress, the electrical parameters including TSV resistance and capacitance, as well as the electromigration-induced...
Soft error simulations utilizing PHYSERD are presented. The comparison with the experimental data for 28 nm SRAM demonstrates that PHYSERD provides the high-accuracy estimation of soft error rate when combined with circuit simulation, while PHYSERD alone tends to overestimate soft error rate. We also analyze the contributions of transistors constituting SRAM and of secondary ions to soft error rate...
A soft contact-lens amperometric glucose sensor as novel non-invasive device of body sensor network was fabricated and tested. Also, the sensor was utilized to tear glucose monitoring. The sensor was constructed by immobilizing GOD onto a flexible oxygen electrode, which was fabricated using “Soft-MEMS” techniques onto a functional polymer membrane. In purpose of bioinstrumentation, adhesive agents...
We describe a technique to overcome the numerical difficulties in the accurate description of the small signal AC response of the thin electrical double layers at the surface of impedimetric biosensor electrodes. The technique significantly reduces the computational burden of the calculation, thus enabling the fast simulation of many analyte configurations.
We have realized the full-scale whole device EMC/MD simulation including source and drain regions by utilizing graphic processing unit. The transfer characteristic of a gate-all-around nanowire Si MOSFET is simulated by reproducing the field effect of the surrounding gate electrode with spreading charged particles on the gate insulator layer. We have found an appreciable impact of the random dopant...
Quantum transport algorithms such as QTBM and NEGF/RGF have been efficiently implemented in the multi-scale simulation tool NEMO5 by taking advantage of the Hamiltonian's characteristics of nanowires without explicit spinorbit coupling in the tight binding representation. Benchmarks in a 3nm diameter, 20 nm length Si nanowire in atomistic 10 band tight binding representation demonstrate 3–5 times...
Although the traditional finite volume scheme based on boxes obtained from the dual Voronoi grid has been employed successfully for classical semiconductor device simulation for decades, certain drawbacks such as the required Delaunay property of the underlying mesh limit its applicability for two-and particularly three-dimensional device simulations on unstructured meshes. We propose a discretization...
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