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This paper presents a novel methodology to design a compact but precise SPICE (Simulation Program with Integrated Circuit Emphasis) model which reproduces complete current-voltage (I-V) characteristics of Silicon Carbide (SiC) power devices. The methodology is based on duality relation between one function for the forward I-V characteristics and its inverse function for the reverse I-V characteristics...
For the first time, an efficient and universal method to design multiple field limiting rings (FLR) structure, which applicable to power devices with thin drift layer is proposed. Avalanche breakdown simulations of simplified structures are performed in each three area; the near main junction area, the outmost area, and the other. From simulation results, optimal spacing between each neighboring FLR...
In this work, we use density functional theory-based calculations to study the hole trapping properties of single carbon-related defects in silicon dioxide. We show that such interstitials are stable in the carboxyl configuration, where the interstitial carbon atom remains three-fold coordinated with chemical bonds to two Si atoms and an oxygen atom (Si-[C=O]-Si). Using formation energy calculations,...
We report a milestone in device modeling whereby a planar MOSFET with extremely thin silicon on insulator channel is simulated at the atomic level, including significant parts of the gate and buried oxides explicitly in the simulation domain, in ab initio fashion, i.e without material or geometrical parameters. We use the density-functional-based tight-binding formalism for constructing the device...
In this paper, a realistic atomic model is used to study the atomic ordering effect on electronic structures of Si0.5Ge0.5. The hybrid density functional theory (DFT), HSE06, is chosen as the methodology. The calculated bandgap and effective masses of Si and Ge at various symmetry points are first validated by the reported experimental data and empirical pseudo-potential method (EPM) calculations...
Monolayer transition metal dichalcogenides (TMDs) are novel gapped two-dimensional materials with unique electrical and optical properties. Here, we study the effect of dielectric oxide slabs on the electronic structure of monolayer MoS2 using density functional theory (DFT) calculations. We also have simulated the effects of O-vacancies in the first few layers of the oxide on the band structure of...
In the course of years, several models have been put forward to explain noise phenomena, bias temperature instability (BTI), and gate leakage currents amongst other reliability issues. Mostly, these models have been developed independently and without considering that they may be caused by the same physical phenomenon. However, new experimental techniques have emerged, which are capable of studying...
Given the rapid recovery of the degradation induced by bias-temperature stress, the understanding and modeling of NBTI has been a challenge for nearly half a century. With the introduction of the time-dependent defect spectroscopy (TDDS), NBTI could be studied at the single defect level, confirming that it is dominated by a collection of first-order reactions rather then the previously invoked reaction-diffusion...
A comprehensive time dependent three dimensional simulation framework for high-k degradation is developed. In this framework, the models that account for trap generation in high-k, capture/emission dynamic, and statistical variability are incorporated in the simulation. The influence of the trap generation model on distribution of traps, threshold voltage, and the amount of trapped charge is investigated...
We present and validate a novel physics-based model for hot-carrier degradation. The model incorporates such essential ingredients as a superposition of the multivibrational bond dissociation process and single-carrier mechanism, dispersion of the bond-breakage energy, interaction of the electric field and the dipole moment of the bond, and electron-electron scattering. The main requirement is that...
New architectures introduction succeeded in reducing the device performances dispersion in scaled transistors, but as a consequence the relative importance of oxide reliability increased. In this work we present original results of charged interface traps impact on bulk, FDSOI and Fin FETs performances. Traps time constants are analyzed and recoverable and permanent degradation proportions are derived...
This paper studies, through Three-Dimensional (3D) TCAD simulations, the formation of gate edge pits on the drain-side of GaN high electron mobility transistors (HEMTs) under electrical stress conditions. These pits are believed to be formed due to electrochemical reactions. The simulations predict that holes, which are necessary to initiate the electrochemical reaction but rare under regular HEMT...
This paper investigates the mobility ‘apparent’ channel length dependency in nanometric devices. Based on a series of current and capacitance measurements, we report clear (VG)−1 dependencies of the access resistance in Bulk but also in FDSOI devices. We show that the μeff-Leff degradation observed at small L can be inferred from this gate-bias dependency. By means of numerical simulation, we show...
Quasi-ballistic electron transport in ultrashort FDSOI devices is analyzed using Multi-Subband Monte Carlo (MSMC) simulations, taking into account the main scattering mechanisms: phonons, surface roughness, and charged impurities in the access regions. In particular, the ballistic resistance (defined as the resistance of the channel in absence of scattering) was extracted from ballistic simulations,...
We present a three-dimensional semi-classical ensemble Monte Carlo device simulator with novel quantum corrections. The simulator includes a beyond-Fermi treatment of Pauli-Exclusion-blocked scattering, and a valley-dependent treatment of various quantum confinement effects. Quantum corrections to the potential are used not only to model redistribution of carriers in real space, but also to model...
The Wigner equation can conveniently describe quantum transport problems in terms of particles evolving in the phase space. Improvements in the particle generation scheme of the Wigner Monte Carlo method are shown, which increase the accuracy of simulations as validated by comparison to exact solutions of the Schrödinger equation. Simulations with a time-varying potential are demonstrated and issues...
In this paper, a comprehensive investigation of quantum transport in nanoscaled gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. A simulation model for quantum transport in nanodevices on unstructured grids in arbitrary dimension and for arbitrary crystal directions has been developed. The model has been implemented as part of the Vienna-Schrödinger-Poisson simulation...
A consistent thermoelectroelastic description of piezoelectric semiconductors with finite deformation is presented. By including both kinematic and constitutive nonlinearities as well as a proper treatment of the electrostatic conditions at free surfaces, the theory allows situations with large strains to be modeled more accurately. In addition, the theory is rotationally invariant unlike the linear...
Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content [1]. This feature can be exploited for highperformance tunnel FET (TFET) application [2], [3]. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a high on-current. In order to reduce...
A three dimensional simulation system for light-illuminated STM measurements is proposed for the first time combining semiconductor process and device simulators with an FDTD solver. Photo-generation rates estimated from light intensity obtained from the FDTD solver are incorporated into a semiconductor device simulation of a device structure including a semiconductor sample and an STM probe tip....
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