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An approach is discussed for producing molecular images with sub-Angstrom atomic precision with few femtosecond exposures. The laser-induced electron diffraction procedure extracts a diffraction pattern from the photoelectron momentum distribution produced by strong-field mid-infrared ionization.
We have developed a sub-two-cycle intense infrared light source using novel BiB3O6 (BIBO)-based optical parametric amplifiers for the generation of high harmonics in soft X rays. The cutoff of high harmonics has extended to ∼320 eV, which is well beyond the carbon K edge. The spectral structures and their dependences on the carrier-envelope phase strongly suggest the generation of single isolated...
We present a phase-stable, multi-mJ 3-channel parametric synthesizer generating 2-octave-wide waveforms (0.52–2.4 µm). After two amplification stages, the combined 125-µJ output supports 1.9-fs waveforms. The energy is scaled to 2 mJ after three amplification stages.
High intense, carrier envelope phase locked, few-cycle laser pulse train is an Ideal tool in number of studies such as generation of coherent super-continuum like spectrum in extreme ultra-violet region through high-harmonic generation [1] and electric field induced physical changes in dielectrics [2].
We have generated 16-MHz, 413-fs pulses with an average power of 600 W in a Kerr lens mode-locked thin-disk ring oscillator under development for intra-cavity high-order harmonic generation.
In the SG-II upgrade project, a petawatt-class beamline is included for fundamental physics and advanced applications. Recently, an elliptical beam was employed for maximum energy while using pulse compression gratings with a size of 380mm×430mm and far-field fluence measurements were achieved in the target chamber.
The SG-II-UP laser facility, which is being constructed in shanghai, China, contains eight identical beamlines. It is designed to deliver 40KJ at 1053 nm at 3ns and 24KJ at 351nm at 3ns with the output beam aperture 310mm×310mm.
Low threshold visible lasers are required for a number of applications including full-color mobile projectors, heads-up displays, optical information processing systems and a host of medical applications. Lasers emitting at λ= 420 nm (blue) and 520 nm (green), have been realized with GaN-based InGaN/GaN multi-quantum wells (MQWs) as the gain media. With one exception[1], these laser heterostructures...
Generation of tunable millimeter-wave (MMW) and Terahertz (THz) signals from 117 GHz to 954 GHz is experimentally demonstrated with a 1310 nm Quantum Dot Distributed Feedback laser subject to single beam optical injection.
Quantum-dot hybrid soliton pulse source (HSPS) utilizing a linearly chirped grating produces considerably shorter pulses when compared with a multi-quantum-well HSPS utilizing linearly and nonlinearly chirped gratings, along with an increase in the mode-locking frequency range.
Simulations using a microscopic, nonequilibrium, semiconductor laser model show that the long-established α-factor concept breaks down in quantum-dot lasers, especially under complex dynamic scenarios, such found during high-excitation or optical-injection operations.
The four-wave mixing (FWM) analysis is successfully applied on the injection-locked quantum dot (QD) laser for linewidth enhancement factor extraction. The rate equation model of the QD lasers is simplified and the analytical model for the FWM analysis is derived and verified. By fitting the experimentally obtained regenerative signals and power spectrum signals at different detuning frequencies with...
Novel semiconductor edge and vertical surface emitting lasers and amplifiers based on nanostructures present the physical layer of future communication systems which demand larger and larger bandwidths up to multi Tb/sec and dramatically increased energy efficiency.
Heterogeneous integration enables all the elements of photonic systems to be fabricated on a single chip with silicon foundries allowing circuits to meet the complexity, and cost requirements of the next generation of communication systems.
A standard deviation in lasing wavelength lower than 500pm is characterized on nominally identical and optically-pumped microdisk lasers, heterogeneously integrated on the same SOI circuit. This lasing wavelength uniformity is obtained using electron-beam lithography.
We present a GaSb-VCSEL concept using SOI-based HCGs as highly reflective mirrors. The optical properties of two different grating designs are simulated using RCWA. These gratings show strong and broadband reflection around 2.3 µm.
We propose a hybrid silicon laser and photodetector system that can emulate the electro-physiological behavior of a real neuron at ultrafast time-scales. Networks of lasers would scale up easily using a silicon III–V wafer-bonding platform.
The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, <0.3dB ripple, and >80 nm 3dB bandwidth at ∼1.55 µm.
InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.
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