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We demonstrate a scheme that can arbitrarily manipulate the orbital-angular-momentum (OAM) and the polarization of each data channel in an OAM- and polarization-multiplexed communication system. A manipulation-induced power penalty of < 1dB is observed when 100 Gbit/s Quadrature-phase-shift-keying data is carried on each channel.
Enabled by a dual-angle and dual-color illumination based computational on-chip imaging platform [7], here we reported the discovery of an entirely new swimming pattern, in the form of chiral ribbons, observed in human and horse sperms. We believe that this imaging platform could help us better understand the statistical behavior of various micro-swimmers and sperms of different species, shedding...
We report progress on the development of a new technique that has the potential to enable the vacuum deposition of OLEDs with feature sizes ≤ 20um, and hence high resolution OLED displays. An OLED device with 16um by 130um sub-pixel size has been successfully demonstrated utilizing the novel idea of the in-situ shadow mask patterning method showing the capability of this method to achieve high resolution...
Organic, polymer, and oxide-based transistors are among the alternatives to silicon being considered for flexible display pixel circuitry. Carrier mobilities in the semiconductors now exceed those of amorphous silicon, and switching voltages can be below 2 V. In this presentation, we focus on gate dielectrics compatible with these semiconductors. First, we consider polymer dielectrics in which static...
Today lighting efficiency and quality are essential to wide-scale utilization of semiconductor lighting technologies. To address these challenges, we develop and demonstrate new classes of color-conversion LEDs1,2 integrating nanophosphors of semiconductor quantum dots for high-photometric quality3 and those enhanced using excitonics (controlling exciton-exciton interactions) through Förster-type...
An approach is discussed for producing molecular images with sub-Angstrom atomic precision with few femtosecond exposures. The laser-induced electron diffraction procedure extracts a diffraction pattern from the photoelectron momentum distribution produced by strong-field mid-infrared ionization.
The talk will focus on advances in high brightness single longitudinal/transverse mode master oscillator power amplifier (MOPA) QCls and MOPA QCL arrays capable of broadband tuning, as well as on low-divergence high brightness QCLs with plasmonic collimators. Specifically we will report on multi-wavelength arrays of master-oscillator power-amplifier quantum cascade lasers operating at wavelengths...
We report flexible tapes of high-performance, top-emitting, quantum dot based, light-emitting diodes (QLEDs) with multicolor emission, actively working even when flexed. The resulting QLED tapes reach a high peak luminance level of 19,265 cd/m2.
We represent differential interference contrast (DIC) microscopy as a new and simple application for diagnostics of RP. We show the possibility that DIC technique may distinguish the RP disease in vivo.
We report efficiency enhancement in quantum dot (QD) based LEDs with the aid of excitonic energy transfer from co-doped TCTA:Ir(ppy)3 layer to CdSe/ZnS QDs while providing spectrally pure emission.
Intensity stability with respect to pumping level and temperature is examined in electrically injected dual-λ lasers with separations between 8 and 63 nm that utilise different quantum dot states or quantum dot and quantum well states.
We present a class of fibers that exploit light propagation in higher-order modes, and hence decouple the dispersion-versus-mode-area trade-off encountered in conventional fibers. This enables exploiting the multitude of nonlinear optical effects afforded by fibers, at energy levels potentially approaching those of tunable solid-state lasers.
Conventional plasmonic structures provide field enhancement in the plane. The proposed nanoplasmonic three-dimensional surfaces, with unity coverage in the plan-view, enable surface-normal enhancement and achieve 7.2-fold stronger maximum field enhancement compared to the two-dimensional counterparts.
Due to limitations in device speed and performance of silicon-based electronics, silicon optoelectronics has been extensively studied to achieve ultrafast optical-data processing. However, the biggest challenge has been to develop an efficient silicon-based light source since indirect band-gap of silicon gives rise to extremely low emission efficiency. Although light emission in quantum-confined silicon...
The wavelength limit (λc) of detection in a conventional photodetector is limited to a characteristic energy (Δ) through the relationship: λc = hc/Δ, where Δ also determines the detector noise (dark current) and hence its performance such as the operating temperature. Here, we report an infrared photodetector with an extended operating range (responding beyond the standard spectral threshold) based...
InAs possesses nearly ideal material properties for the fabrication of near- and mid-infrared avalanche photodiodes (APDs). Because electron impact ionization in InAs is greatly favored over hole impact ionization [1], InAs multiplication regions exhibit several appealing characteristics, including extremely low excess noise factors and bandwidth independent of gain. These properties make InAs APDs...
Superconducting nanowire single-photon detectors are a highly promising infrared photon counting technology. We will review recent applications of these devices in quantum information science, remote sensing and medicine.
CARS holography combines the chemical selectivity of CARS with the amplitude and phase imaging capability of holography to establish a novel label-free imaging technique. Here, we review CARS holography and its application to biological imaging.
III–V semiconductor nanowires hold outstanding potential as key component for future photonic and electronic devices, among which GaAs/AlGaAs heterostructure nanowires wires show particular promise. However, due to the large surface-to-volume ratio, the carrier lifetime and mobility of GaAs nanowires are extremely sensitive to the surface/interface states. Although nearly intrinsic exciton lifetimes...
A new designer dielectric metamaterial featuring an isotropic photonic bandgap at 1550 nm wavelength designed as a finite thickness, 220 nm thick 2d slab, is fabricated in a CMOS-compatible silicon-on-insulator process. This “hyperuniform disordered solid” (HUDS) is neither crystalline nor quasicrystalline.
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