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A low noise 50×100 µm2 pnp pin phototransistor is presented in this paper. The phototransistor is fabricated in a 0.35 µm CMOS process. An optimized layout leads to responsivities up to 1.99 A/W and bandwidths up to 151.4 MHz. Noise measurements show a low total output current noise spectral density of only 6.67×10−24 A2/Hz for a collector current of 2 µA.
A time-of-flight range finding sensor using a monolithic integrated pnp phototransistor is presented. The phototransistor was specially adapted for the requirements of the time-of-flight application. The sensor has a fill factor of 75 % and achieves standard deviations down to 7.3 mm at 6250 fps and an incident optical power of −40 dBm.
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