The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Optical interconnect for a DDR3 DRAM device is verified at a 4∶1-serialized 1.6-Gbps data rate using a FPGA-based memory controller board and optical transceiver chips with bulk-Si-based photonic die and electronic die co-packaged.
Devices fabricated on 4 µm thick SOI wafers are presented. They include a router based on AWGs and SOAs, a demultiplexer based on cascaded MZIs, ring resonators, and a novel concept of MMI resonator.
A compact all-silicon Mach-Zehnder interferometer (MZI) filter with temperature sensitivity less than 5pm/ K is demonstrated. The device achieves a reduced footprint by making use of different polarizations.
A reconfigurable and tunable bandpass microwave photonic filter is demonstrated with simulation. The operating frequency and −3dB bandwidth can be tuned from 16 to 40 GHz and from 5 to 15 GHz respectively.
A novel vertical grating coupler-based silicon photonic devices and photonic integrated circuits (PIC) have been demonstrated on CMOS-compatible SOI Platform. The monolithically PIC demonstrated 4Gb/s optical interconnection.
New possibilities of light modulation in Ge/SiGe quantum wells are experimentally explored using asymmetric polarization dispersion of light-hole excitonic transitions. QCSE from electron-light-hole transition can significantly reduce footprint, energy dissipation over the previously-studied electron-heavy-hole transition.
We report uniaxial tensile strains up to 5.0% in lithographically patterned germanium nanowires, which is enough strain to make germanium a direct bandgap semiconductor. Theoretically, this strain can reduce a germanium laser's threshold by >16,000x.
We demonstrated a vertical optical interlayer transfer device composed of a pair of inverse taper spot-size converters with an insertion loss of 1.8 dB using a CMOS back-end compatible process.
Feasibility of micron-scale SOI waveguides for dense photonics integration is demonstrated. Compact circuits are obtained by applying multiple etching steps on 3–12 µm thick SOI layers. Optoelectronics is integrated on SOI using thermo compression bonding.
Large-scale optical phased arrays containing up to 64×64 nanoantennas are demonstrated on silicon photonic platform, representing the largest scale demonstrated to date. Active phase tuning is also realized for dynamic pattern generation.
We show that the dispersion of nonlinearity can be engineered in silicon slot waveguides over a wide wavelength range. A hardly observable nonlinear effect - reversed self-steepening now becomes possible on a chip.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.