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This study reports two types of Si epitaxial growth techniques, SPE and LEG, used for bulk-Si based optical interconnect. Experiments show that the LEG technology enhances both crystalline quality and epitaxial growth length.
Optical interconnect for a DDR3 DRAM device is verified at a 4∶1-serialized 1.6-Gbps data rate using a FPGA-based memory controller board and optical transceiver chips with bulk-Si-based photonic die and electronic die co-packaged.
A novel vertical grating coupler-based silicon photonic devices and photonic integrated circuits (PIC) have been demonstrated on CMOS-compatible SOI Platform. The monolithically PIC demonstrated 4Gb/s optical interconnection.
New possibilities of light modulation in Ge/SiGe quantum wells are experimentally explored using asymmetric polarization dispersion of light-hole excitonic transitions. QCSE from electron-light-hole transition can significantly reduce footprint, energy dissipation over the previously-studied electron-heavy-hole transition.
We demonstrated a vertical optical interlayer transfer device composed of a pair of inverse taper spot-size converters with an insertion loss of 1.8 dB using a CMOS back-end compatible process.
We fabricated germanium waveguides on lateral silicon-on-insulator diodes for monolithic integrated light emitters and photo detectors. The fabricated devices show enhanced light emission properties and photo detection properties, namely, a dark current of 2 nA.
We present a controllable bonding method and a self-aligned process for III–V based optical interconnects on Silicon. Optical interconnects are demonstrated with microdisk lasers with either ultra-low threshold current or record high slope efficiency.
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