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The analog performance, i.e. intrinsic gain and bandwidth, of SOI (Silicon-on-Insulator) MOSFETs in a wide temperature range up to 400°C has so far been strongly affected by device leakage currents. Thereby the moderate inversion region as a preferred point of operation has been unusable as leakage currents dominate drain currents at high temperatures. In this paper we present a reverse body biasing...
A Schottky diode technology based on silicon carbide (SiC) with ramp oxide termination is presented. The improvement of the Schottky, respectively ohmic contact is conditioned by a rapid thermal processing to form Ni-silicide. The Schottky diodes (SD) have been electrical characterized in forward bias in range of temperature 300–573 K to verify their capacity to operate like temperature sensors. The...
This paper proposes an interface circuit for wirelessly powered implants for mice temperature monitoring. The circuit contains the read-out circuit and a data converter. By using a novel approach to cancel the non-linear effects of thermistor sensors, the circuit achieves 27dB higher SFDR. The system is designed in UMC CMOS 0.18μm technology, which has 200KHz sampling rate, 8-bit resolution, and total...
Key generation is one of the most promising applications of Physical Unclonable Functions (PUFs), which requires 100% robust bit streams within each circuit and true randomness among a set of circuits. However, due to the noisy nature of PUFs, it is hard to provide stable outputs under changing environmental conditions, such as supply voltage and temperature. In this work, we have adapted Dynamic...
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