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The SuperB factory is an Italian e+ e− accelerator project that plans to reach a luminosity higher than 1036 cm−2s−1 by means of a very small beam size and with moderate beam currents. To achieve the performance imposed by physics, six layers of microstrip silicon sensors, with different pitches and lengths, are foreseen in the present design of the Silicon Vertex Tracker (SVT). The SuperB SVT readout...
A wafer scale CMOS Active Pixel Sensor has been designed employing design techniques of transistor enclosed geometry and P+ doped guard rings to offer ionizing radiation tolerance. The detector was irradiated with 160 kVp X-rays up to a total dose of 94 kGy(Si) and remained functional. The radiation damage produced in the device has been studied, resulting in a dark current density increase per decade...
A new large area CMOS Active Pixel Sensor has been developed as single platform technology to be used across a range of ionizing and non-ionizing imaging applications in preclinical science, ranging from imaging of protein sequences to functional analysis of radio-labeled tissue sections.We present the first images of chemiluminescence detection in western blotting with a room temperature CMOS APS...
This work is concerned with the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous vertically integrated technology. An evaluation of the 3DMAPS device performance, designed for a possible future upgrade of the SuperB-Layer0, is provided through a complete characterization of the prototypes, including tests with infrared (IR) laser,...
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