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The trade-offs between the technology parameters of various interconnect technologies are investigated on the basis of their impacts on the circuit performances of emerging post-CMOS devices. In this paper, carbon nanotube field-effect transistor (CNFET), nanowire-based gate-all-around (GAA) tunneling field-effect transistor (TFET), FinFET and sub-threshold CMOS circuits are studied. Each of these...
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