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The effects of access region scaling on the performance of millimeter-wave GaN HEMTs is investigated through nanoscale carrier dynamics description obtained by full band Cellular Monte Carlo simulation. The drain current and transconductance have shown to increase monotonically up to respectively 5500 mA/mm and 1500 mS/mm by symmetrically scaling the source to gate and gate to drain distance from...
Acoustic phonon scattering is known to play an important role in accurately describing hole-transport in semiconductors such as Si and Ge. However, it has been difficult to treat accurately and efficiently due to its dispersion relationship, thus it is often treated as an elastic process or by using constant phonon energy. Here we present an efficient approach for handling inelastic acoustic phonon...
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