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Single-Event-Burnout (SEB) is a catastrophic failure mode in power semiconductor devices triggered by cosmic ray heavy ions. Thus, it is essential to improve the robustness of these devices under this environment. In this paper a new design of planar insulated gate bipolar transistor (IGBT) aimed at improving the immunity to SEB is proposed and validated by employing 3D Sentaurus — simulation. We...
Avalanche multiplication has been one of the major destructive failure mechanisms in IGBTs; in order to avoid operating an IGBT under abnormal conditions, it is desirable to develop peripheral protecting circuits monolithically integrated without compromising the operation and performance of the IGBT. In this paper, a monolithically integrated avalanche diode (Dav) for 600V Trench IGBT over-voltage...
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