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In this paper we present a unity-gain follower amplifier based on a gated diode operated in breakdown regime in common cathode configuration. The amplifier has only one stage and it provides power amplification, high input impedance and a low output one. The maximum frequency that can be applied on the entrance of the amplifier so that the output remains undistorted is dependent on the bias current...
The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the...
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