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The non-ideal behaviour of a classical comparator-based first-order relaxation oscillator is analysed. The influences of the comparator slew-rate and output resistance as well as the parasitic resistances of the reactive element are considered. Numerical simulations at system level and transistor level are given.
Actual MOS transistors models only use empirical models for the variation of the drain current in saturation. This is due to the bidimensional character of the MOS transistor channel. Gradual approximation can no longer be used for the whole transistor analysis due to the channel length modulation. But the gradual approximation still stands for the effective channel length of the transistor. And this...
The gate and bulk resistances influence on the impedance matching in case of MOSFET common gate amplifiers is investigated. It is shown that using a supplementary resistance of maximum 100Ω, S11 becomes less than −15 dB over a wide frequency range, therefore making the circuit suitable for low power wideband RF applications and less sensitive to the loading capacitor value, at the price of a supplementary...
This paper presents a fully protected high side switch design from the short circuit perspective. The high side switch is dual configurable: either 7 Ω or 2 Ω in terms of ON resistance, each with its short circuit current limitation level. The circuit was implemented in a BCD technology, where the key for area efficiency is making use as much as possible of the low voltage components. This is especially...
This paper proposes an over current protection circuit implementation with a new selectable threshold level function. The over current threshold level is controlled from a dedicated pin by an external resistance. A circuit capable of providing a reference current proportional to the external con-trol resistor is designed. Simulation and measurement results are presented.
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