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Actual MOS transistors models only use empirical models for the variation of the drain current in saturation. This is due to the bidimensional character of the MOS transistor channel. Gradual approximation can no longer be used for the whole transistor analysis due to the channel length modulation. But the gradual approximation still stands for the effective channel length of the transistor. And this...
This paper presents an external control technique for the current limit in LDOs. Using an external resistor, the user can change the current limit within wide domain. This is possible by using a special block which generates the current reference for the current protection block. The block consumes between 5 and 25μA, and uses the 1.25V voltage reference. This technique was implemented within an adjustable...
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