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The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the...
A new behavior modeling method is presented to model ESD protection devices with voltage snapback. It resolves the convergence problem induced by snapback characteristic. The model can pass HBM, MM and TLP transient simulations in SPICE. The reason for convergence robustness is also discussed.
Over the last years, power has became a primary consideration in hardware design, and it is critical in computer systems especially for portable devices where the batteries should last long before they need to be replaced or recharged. Starting from this consideration the paper presents a model for estimation of power consumption of an 8-bit microcontroller early in the design cycle of embedded software...
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