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Base pushout due to current-induced perturbation is one of the dominant factor for the degraded speed performance of the modern bipolar junction transistors (BJT). With the scaling down of the feature size of the modern BJT's, the degrading effects due to base pushout becomes increasingly prominent. Therefore, an accurate modeling of base transit time, which is the most significant component in determining...
The conventional open gate ISFET sensor is normally very sensitive to light exposure which influences the sensor characteristics. In this study, different process conditions of ISFET were simulated using SILVACO TCAD in order to find the right doping profile which minimizes light effect. Various channels doping levels for ISFET sensor have been analyzed. Comparison with SRP samples was done in order...
The significance of variation on tilt angle ion implantation for fabricating the Vertical MOSFET with ORI (Oblique Rotating Implantation) technique is investigated. For this purpose, the angle of the ion implantation for forming the source and drain region is varied from 0° to 80°. Various effects on physical structure of the device and its corresponding electrical properties have been observed. The...
This paper presents a simple but effective way to improve an NMOS transistor's ESD robustness for use in I/O pads. Simulation and physical failure analysis has been performed to identify the source of the ESD failure. Process splits have been performed primarily at LDD (Lightly Doped Drain) implant and salicidation process based on data presented in this paper. Both TLP (Transmission Line Pulse) measurements...
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