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Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the reverse leakage is due to generation-recombination via mid-band traps assisted by Frenkel-Poole emission of carriers...
Nano-structured ZnO thin-film is grown by dc-magnetron sputtering on Si substrates using a sintered ZnO target. As grown film is characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). About 165 nm thick ZnO film is revealed with highly oriented, nano-structured columnar grains. Nickel (Ni) Schottky diodes are fabricated and characterized by current-voltage (I-V), capacitance-voltage...
We present the Product Chip Monitor-Wafer Level Reliability (PCM-WLR) model and characteristic of a 45nm thick gate-oxide (GOX), trench DMOS technology. The process control monitor (PCM) refers to the suite of test structures usually placed in the scribe line (alternatively named kerf, street or test key) separating product die on the wafer [1]. The motivation of this work is to establish the baseline...
A study on the effect of process fabrication for MIM capacitors analog matching performance was carried out, impacts from the MIM dielectrics, capacitor top and bottom metal materials, capacitor metal etch, wet cleaning, annealing process will be revealed by comparing the Pelgrom coefficients, i.e. the dependence of difference in capacitance of the matching pairs with respect to their corresponding...
Convective accelerometer does not contain seismic mass and work based on free convection heat transfer of electrical heater inside a hermetic chamber. Its sensitivity is dependent to the temperature distribution of working fluid inside the hermetic chamber. In this paper, the effect of working fluid properties, acceleration and heater power on temperature profile inside the convective accelerometer...
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