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Base pushout due to current-induced perturbation is one of the dominant factor for the degraded speed performance of the modern bipolar junction transistors (BJT). With the scaling down of the feature size of the modern BJT's, the degrading effects due to base pushout becomes increasingly prominent. Therefore, an accurate modeling of base transit time, which is the most significant component in determining...
In this work, a numerical analysis on cadmium stannate (Cd2SnO4) as front contact, zinc stannate (Zn2SnO4) as buffer layer and antimony telluride (Sb2Te3) with molybdenum (Mo) as back contact has been conducted in the conventional (SnO2/CdS/CdTe/Ag) CdTe cell structures. Here, CdS window layer is replaced by zinc cadmium sulphide (ZnxCd1−xS) aiming to improve efficiency and stability utilizing Analysis...
Undoped and Mn doped ZnO films with different doping concentration were synthesized by sol gel method using the spin coating technique. Zn1−xMnxO thin films are prepared using 2-methoxyethanol solution of zinc acetate dehydrate and manganese acetate tetrahydrate. The quantity of Mn in the sol was varied for each experiment with an annealing temperature of 500°C. As to investigate the physical properties...
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