The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
N-polar GaN field-effect-transistors (FETs) have the potential advantage in scaling to sub-50nm gate lengths because of the confinement provided by the wide bandgap back-barrier. High-performance enhancement-mode (E-mode) N-polar GaN devices with self-aligned source/drain have recently been demonstrated with a current gain cut-off frequency (ft) of 120 GHz at a gate length of 70 nm [1]. Further scaling...
In this paper we present a comprehensive study of the solution-based printed carbon nanotube purified-ink devices while introducing a new idea of controlling the electronic performance of these devices. One of the most important concerns in nanoelectronics is whether the nanotube-based devices will ever enter the reality world of circuit designs? What are the fundamental and critical issues to be...
To summarize, using ballistic NEGF-based transport simulations, we project the maximum performance achievable with monolayer MoS2 transistors. Our simulations show that these devices can provide (i) excellent switching behavior with very high ON current, (ii) a gm of about 3 mS/µm, and (iii) immunity to short channel effects thanks to the electrostatistically efficient 2-D geometry. We have also investigated...
Graphene is a possible candidate for post CMOS applications and mobility is a material characteristic that has been utilized to gauge the quality of the material[1]. Mobility of exfoliated graphene transferred on SiO2 has been reported to range from 2,000 to 25,000 cm2/V·s [1, 2]. The large variation is typically attributed to factors such as scattering by defects in the underlying substrate, residue...
The hydrogen-terminated diamond surface has demonstrated unique potential in the development of high power and high frequency field effect transistors (FETs) [1]. Further exploration into the intrinsic performance limitations and device operation as gate length is reduced however is essential in unveiling the potential of this exotic material system as a viable and competitive high power and high...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.