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N-polar GaN field-effect-transistors (FETs) have the potential advantage in scaling to sub-50nm gate lengths because of the confinement provided by the wide bandgap back-barrier. High-performance enhancement-mode (E-mode) N-polar GaN devices with self-aligned source/drain have recently been demonstrated with a current gain cut-off frequency (ft) of 120 GHz at a gate length of 70 nm [1]. Further scaling...
III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-?? gate...
A scaling path for Si based technology seems possible to the 8nm node. Power limitation will force to reduce the supply voltage at the expense of device performance and susceptibility to process variations. A lower limit of Vdd=0.5V seems feasible. Parallelism on system level will provide system through put which stresses architecture and software development. In particular legacy code will be a problem...
Compound semiconductors such as In0.7Ga0.3As and InSb are being actively researched as replacement for silicon channel materials for logic applications due to their superior transport properties [1,2]. Planar III–V quantum-well FETs have already demonstrated with superior performance than the state-of-the art Si MOSFETs for low supply voltage (Vcc) applications [1–3]. A key research challenge remains...
Given adequately low source/drain (S/D) access resistivity and dielectric interface trap density (Raccess < 50 Ω-µ,1 and Dit < 2 · 1012 cm−2 eV−1,2 respectively), InGaAs MOSFETs will provide greater on-state current than silicon MOSFETs at the same effective oxide thickness (EOT). The access resistance must be obtained in a self-aligned structure with a contacted gate pitch ∼4 times...
InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering...
Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1]. A Mixed anion InAsySb1−y quantum well heterostructure with high electron mobility of 13,300 cm2/Vs has already been demonstrated at a sheet carrier density of 2×1012 /cm2, albeit for a thick EOT quantum well (QW) structure [2]. A thin EOT structure...
Recent success of inexpensive and high-throughput chemical vapor deposition (CVD) growth [1] of graphene on Ni or Cu substrates has shown promises for potential industrial applications such as transparent electrodes [2] and field effect transistors (FET). [3] However, high-coverage uniform growth of monolayer graphene on a wafer scale is still a major obstruction, which impedes high yield integration...
Graphene has emerged recently as an attractive channel material for high frequency analog device applications. High carrier mobility and large gate capacitance are both desirable attributes for such devices. A main obstacle however in depositing thin dielectrics on graphene, with high dielectric constant is its chemical inertness. This obstacle can be overcome by either directly depositing the dielectric,...
Graphene is being investigated as a promising candidate for electronic devices. For digital electronic devices, a substantial bandgap is necessary. It is possible to open a bandgap in graphene by quantum confinement of the carriers in patterned graphene nanoribbons (GNRs); GNRs with width W nm have a bandgap Eg∼1.3/W eV [1]. This implies that sub-10 nm wide ribbons can enable room-temperature operation...
The low density of states in graphene makes it possible for the quantum capacitance to be of the same order of magnitude as the oxide capacitance for experimentally achievable gate dielectric thicknesses [1]. This property, combined with the fact that the density of states varies as a function of energy, means that the capacitance in a metal-oxide-graphene capacitor can be tuned by varying the carrier...
Due to its large-area capability and high resolution, photolithography is the preferred patterning method for pentacene thin-film transistors (TFTs) for display and circuit applications [1,2]. Since the morphology of thin pentacene films is very sensitive to solvents and heat [3,4], the photolithographic patterning of the source/drain contacts is ideally performed prior to the pentacene deposition,...
ZnO-based semiconductors with the wide-band gap have attracted great interest for electronic and optical applications [1]. Among them, an amorphous In-Ga-Zn-O (a-IGZO) has been intensively studied [2,3]. The thin-film transistors using of a-IGZO as an active n-channel layer exhibit good performances such as the high field-effect mobility [μFE ∼ 10 cm2 (Vs)−1], Ion/Ioff ratio of ∼108, and excellent...
Source-gated transistors (SGTs) [1] are three-terminal devices in which the current is controlled by a potential barrier at the source. The gate voltage is used primarily to modulate the effective height of the source barrier. These devices have a number of operational advantages over conventional field-effect transistors, including a potentially much smaller saturation voltage and very low output...
Spin wave spintronics (also known as magnonics) processes information by propagating spin waves with no charge displaced. Because dissipation is thus minimized this is rapidly becoming an important subject of research within the larger area of spintronics. The logic states in magnonic circuitry can be defined either by the phase or by the amplitude of the spin wave. In both cases, a π-phase shifter...
Devices with steep subthreshold swing (SS) are of great interest and significance in view of increasing subthreshold leakage current with the continuous MOSFET scaling. The standby power dissipation has grown due to the nonscalability of the SS to below 60 mV/dec at room temperature (RT). To circumvent this obstacle, novel devices that employ various turn-on mechanisms have been proposed1–4. In this...
ZnO thin film electronics have received much attention due to the relatively high electron mobility of ZnO thin films in comparison to amorphous silicon (a-Si) and organic thin films. There is significant interest in using ZnO thin film transistors (TFTs), or similar oxides such as InGaZnO and zinc tin oxide, to replace a-Si TFTs in large area display technologies such as active matrix liquid crystal...
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