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Thermal stability of the high-k/In0.53Ga0.47As interface has been analyzed by both physical and electrical methods for the first time. It has been found that As-O and In-O bonds decompose and Ga-O bonds form above 400°C, as shown by XPS and corroborated by TEM, SIMS and EDX. Electrically, this interface decomposition resulted in increased frequency dispersion (accumulation), C-V shift, and mobility...
Spacer-less In0.7Ga0.3As n-MOSFETs with self-aligned Ni-InGaAs contacts formed using a direct reaction between Ni and InGaAs were demonstrated. A novel salicide-like metallization process was developed to achieve self-aligned Ni-InGaAs contacts, comprising the steps of Ni reaction with InxGa1-xAs and selective removal of excess Ni. Dopantless n-MOSFETs with metallic Ni-InGaAs source/drain (S/D) and...
This work investigates the impacts of quantum confinement on the short-channel effect and band-to-band-tunneling (BTBT) of UTB Ge and InGaAs NMOS devices using derived analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that, when the channel thickness (Tch) is smaller than a critical value (Tch, crit), the quantum confinement effect may decrease the threshold...
High mobility III-V compound semiconductors are the most attractive candidates who could provide enhanced performance for future logic applications. Even so, people still hesitate to accelerate III-V materials entering into Si CMOS world. To relieve people's concerns, the integration of thin III-V on Si and Si transistor-like technique or architecture should be demonstrated.
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