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Due to the excellent control of DG MOSFETs over the short channel effects, they have been considered as a leading candidate to extend the scaling limit of conventional bulk MOSFETs. However, the hot carrier injection into gate oxides remains a potential problem in reliability field hence altering the device lifetime. In the present paper, a comprehensive drain current model incorporating hot-carrier-induced...
It's widely recognized that Gate-All-Around (GAA) MOSFETs are considered among the most probable choices to continue CMOS performance boost beyond the conventional scaling frontiers. Such device offers the best controllability of short-channel effects claimed to be the predominant factor limiting how far the downscaling can be achieved. However, the lack of analytic compact models for degraded drain...
We present the calculation of noise expressions of low voltage amplifiers by applying symbolic nodal analysis and using nullors. The nullor equivalents of the MOSFETs include only the dominant parasitic elements in order to generate a simplified symbolic noise expression, which provides a good insight to improve the design of low voltage amplifiers. The generated symbolic noise expressions are compared...
In this work, design of low-voltage low-power analog artificial neural network (ANN) circuit blocks by using subthreshold floating-gate MOS (FGMOS) transistors and a neuron circuit is implemented. The circuit blocks, four-quadrant analog current multiplier and FGMOS based differential pair, have been designed and simulated in CADENCE environment with TSMC 0.35μm process parameters. Using the proposed...
An accurate new and simple numeral modeling of nano-scale dual gate n- MOSFET device in the ballistic region is presented. The model and the analysis is performed with channel length below 20 nm where electron transport is predominantly ballistic. In this paper a new developed modeling approach based on Boltzmann transport equation and Poisson equation in an n-channel nanoscale double-gate MOSFET...
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