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Due to the excellent control of DG MOSFETs over the short channel effects, they have been considered as a leading candidate to extend the scaling limit of conventional bulk MOSFETs. However, the hot carrier injection into gate oxides remains a potential problem in reliability field hence altering the device lifetime. In the present paper, a comprehensive drain current model incorporating hot-carrier-induced...
It's widely recognized that Gate-All-Around (GAA) MOSFETs are considered among the most probable choices to continue CMOS performance boost beyond the conventional scaling frontiers. Such device offers the best controllability of short-channel effects claimed to be the predominant factor limiting how far the downscaling can be achieved. However, the lack of analytic compact models for degraded drain...
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