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In this work, a deep submicron double-gate (DG) Gallium Nitride (GaN)-MESFET design and its 2-D threshold analytical model have been proposed and expected to suppress the short-channel-effects for deep submicron GaN-MESFET-based low power applications. The model predicts that the threshold voltage is greatly improved in comparison with the conventional Single-Gate GaN-MESFET. The developed approaches...
An algorithm for multiparameter sensitivity analysis of a synthesized network based on a nullor model of active devices is implemented. It is simplified by using the modified Coates flow-graph. Due to the suggested method, additional information for parameter influence upon transmission coefficients in the circuit is obtained, all partial transfer functions and their products can be found. An example...
This paper presents a special package for Maple program designed for electric and electronic circuit analysis. The package contains functions for analysis of continuous-time linear and nonlinear circuits as well as periodically switched linear circuits. The method of analysis is based on modified nodal voltages method. Results can be obtained in symbolic or semisymbolic form. This contribution introduces...
A new two-dimensional analytical model for the potential distribution and depletion-layer width for the short-gate GaAs MESFET's has been presented in this paper. The solution of the two-dimensional Poisson's equation has been considered as the superposition of the solution of one-dimensional Poisson's equation in the lateral direction and the two-dimensional Laplace equation with suitable boundary...
Due to the excellent control of DG MOSFETs over the short channel effects, they have been considered as a leading candidate to extend the scaling limit of conventional bulk MOSFETs. However, the hot carrier injection into gate oxides remains a potential problem in reliability field hence altering the device lifetime. In the present paper, a comprehensive drain current model incorporating hot-carrier-induced...
In this paper, we presented a new analytical model for the transconductance and output conductance of submicron gate-length GaAs MESFET transistors. After an analytical study of the current voltage characteristics, the transconductance and drain conductance mathematical expressions are determined as a function of the drain and gate voltages in different operations regimes (linear, non-linear and saturated)...
The constraints to manage in a telecom splitter design are numerous and according to a given splitter structure, the choice became difficult. The paper proposes a software tool allowing the design of such filters. This one carries out the modelling of the electrical circuit configurations, and creates the corresponding computation code, used for simulation or optimisation. The methodology is detailed...
The objective of this paper is to demonstrate in which case asymmetric coupled structures can be analyzed as symmetric line models in order to use the quasi-symmetric approach. For this aim, a rigorous formulation was used; trial functions of even and odd modes were obtained from the symmetric case, and thus proposed for the asymmetric case. A comparative study of dispersion parameters shows the limits...
This paper describes a graphical method for the optimization of Quadrature Voltage Controlled Oscillators (QVCOs) based on the coupling of two LC-tank VCO. A three-dimensional phase noise analysis diagram and graphical optimization approach is presented, to optimize QVCO phase noise while satisfying design constraints such as power dissipation, tank amplitude, tuning range and start up condition....
This article describes logical analysis infrastructure of associative tables (matrices), which enables to perform processing the interaction of the input vector with n-dimensional algebra-logical space, specified by using the ordered and structured tables of problem-oriented data, which represent the associative behavioral models of logical objects. To estimate the interaction of vectors in algebra-logical...
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