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The conventional threshold voltage shift measured by extrapolating transfer characteristics, ΔVth(ex), underestimates the NBTI-induced degradation of drain current, ΔId. Mobility degradation, Δμ, has been proposed as a potential contributor to ΔId. Evaluating Δμ, however, can be problematic and controversial. For test engineers, it is desirable to include all degradations in one parameter and we propose...
This work presents the mechanism of Stress induced leakage current (SILC) under NBT stress. Experiment results show that there are three kinds of oxide traps generated under NBT stress: hole traps with full recoverable characteristic, hydrogen related traps with irrecoverable characteristic and a kind of positive trap which can promote the hole tunneling after neutralization. The cause of SILC is...
Analog circuit designs are often biased to work in sub-threshold mode with good gate-source voltage matching performances. Depending on the process, hump effect may change the MOS characteristics for negative Bulk-Source Voltage (VBS) and have a slight impact for VBS=0V. To model the hump effect, two narrow parasitic MOS are introduced in parallel with the main device. To accurately simulate matching...
A new procedure to determine source/drain series resistance and effective channel length has been developed for MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered by differential and integration processes. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 μm. The parameters extracted with this...
In this paper we present the modeling of low frequency in 0.18um PDSOI technology. The two main noise sources, 1/f and excess noise due to shot noise have been discussed. It has been shown that accurate modeling of the body voltage, impact ionization, diode currents and 1/f noise characteristics is essential to incorporate the correct bias and frequency dependence of this excess noise component. Model...
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