In this paper we present the modeling of low frequency in 0.18um PDSOI technology. The two main noise sources, 1/f and excess noise due to shot noise have been discussed. It has been shown that accurate modeling of the body voltage, impact ionization, diode currents and 1/f noise characteristics is essential to incorporate the correct bias and frequency dependence of this excess noise component. Model to hardware correlation for body-contacted and floating body device is also shown to match well with the industry standard BSIMSOI 4.3 model.