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The requirements of segmented current-steering DAC's MSB part for transistor matching are very high. In this paper, a diagonal layout is presented which can meet very well the requirements of 12-bit DAC monotonicity. The DAC was developed in TSMC 0.18um process technology. As a result of measurements, the static errors are: DNL=±0.15LSB, and INL=±0.2LSB.
Space applications using advanced foundry processes require accurate assessment of the dependence of total-ionizing dose (TID) response on process variability and layout. A new test chip is described to enable large sample of device measurements under irradiation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation.
The diode operated in forward-biased condition has been widely used as an effective on-chip electrostatic discharge (ESD) protection device at GHz RF and high-speed I/O pads in CMOS integrated circuits (ICs) due to the small parasitic loading effect and high ESD robustness. Based on waffle layout style, two modified layout styles have been proposed, which are called as multi-waffle and multi-waffle-hollow...
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