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This paper presents a complementary Lubistor and TFET (CLTFET) inverter, which is composed of a lateral unidirectional bipolar-type insulated-gate transistor (Lubistor) load and a tunneling field effect transistor (TFET) driver. Based on the measurement data of Lubistor and TFET devices published, we have for the first time drawn the load lines and operation point line (Q line) of the new designed...
Based on the exact solution of the Poisson's equation, a new two-dimensional (2-D) model for the silicon-on-insulator (SOI) fully-depleted four-gate transistor(G4-FET) is successfully developed. The model is verified by its good agreement with the numerical simulation of the device simulator. For the threshold voltage degradation, it is found that the lateral coupling effects between lateral gate...
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