This paper presents a complementary Lubistor and TFET (CLTFET) inverter, which is composed of a lateral unidirectional bipolar-type insulated-gate transistor (Lubistor) load and a tunneling field effect transistor (TFET) driver. Based on the measurement data of Lubistor and TFET devices published, we have for the first time drawn the load lines and operation point line (Q line) of the new designed CLTFET compared with the conventional CTFET to verify its feasibility. The delay time is improved more than 29.5%. Additionally, due to its unique structure and the output node being shared by the load and the driver, the integration density of it can be reduced dramatically. The area benefit thus more than 32.6% has been achieved compared with the conventional CTFET layout.