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The AlGaN/GaN heterostructure without oxide (HFET) and with additional aluminium oxide underneath the gate (MOSHFET) were investigated with regards to RF performance. Both cutoff frequency and maximum frequency of oscillation were measured and compared by means of small signal analyses and equivalent circuit parameter extraction. The maximum oscillation frequency fmax is an important figure of merit...
We correlate dc maximal drain current IDSmax, pulsed output characteristics, rf small-signal and breakdown performance of normally-off InAlN/GaN HEMTs with varied gate-to-drain distance dGD. It is found that parasitic lag effects which are related to the possible surface states are not appearing at longer dGD. On the other hand compromise need to be found between the improved gate performance and...
We tried to assess the influence of interface states between AlGaN barrier and GaN buffer layer and interface states on C-V characteristics of the AlGaN/GaN structure. Interface donor states were modelled with discrete peak distribution in energy with certain energy with respect to the conduction band minimum and also by continuous distribution of interface traps in energy. We found that interface...
We subjected organic thin film transistors with different gate dielectrics to soft-UV irradiation. Irradiation reduces the transconductance on all devices, regardless the gate dielectric employed. However, UV irradiation differently impacts on the drain current: it decreases on devices with hexamethyl-disilazane treated gate dielectric, mainly due to transconductance degradation. Conversely, negative...
Great advances in the development of III-V diluted magnetic semiconductors materials (DMS) allow for the incorporation of ferromagnetic epitaxial layers into advanced structures. In this contribution, we report on the growth of GaAs/InMnAs layers by metalorganic vapour phase epitaxy (MOVPE) over an AlGaAs/GaAs MQW light-emitting diode structure. In particular, results of electrical and structural...
Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%) / X2O3(2%) ceramic target, X ∈{Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence...
Structural and electrical properties of ZnO:Ga thin films synthesized by RF sputtering and N-doped by ion implantation were studied. The ZnO films with an addition of 2 at% of Ga were deposited on Corning glass substrates to a thickness of 0.5 μm. Nitrogen ions were implanted at 180 keV, to 1015 - 1016 at/cm2, at room temperature. It was found that the as-deposited ZnO films have a polycrystalline...
Low pressure apparatus combining N2O plasma, DEZn transported in argon and UV irradiation of the deposition zone has been used. ZnO layers were deposited on Si (100) and GaP (111) substrates. Best quality layers were deposited on Si substrates. Growth rate was changed in the range 2 to 90 μm/hour. Surface morphology at smaller growth rate was regular nanowalls type on both Si and GaP substrates. More...
This paper presents an example of optimization of piezoresistive element placement on substrates for different types of deformation transducers (single side fixed cantilever beam and membrane). Modelling of structures was performed by simulator utilizing finite element method (FEM). Modelling and simulation of stress and strain distribution and deformations is practically essential for any design...
The paper describes a new approach to calculate currents in a PN diode based on the extension of the Shockley-Read-Hall recombination-generation model. Presented model is an alternative to Hurkx model of trap assisted tunnelling.
In high voltage super-junction (SJ) power transistor, to achieve high breakdown voltage, exact charge balance between the p-pillar and n-pillar is required. However, if there is a charge imbalance due to doping difference between the n and p pillars, the field profile gets disturbed, and BV is reduced. Effect of the gate voltage variation on the forward blocking capability is investigated using simulation...
This paper explains problematic of EMG (electromyography) signal measurements. Described experiments are partition of complex project “MEDISYS” dedicated to design of modern medical equipment, consisting the latest technologies and IC. The design is based on low noise wireless measurement block (for ECG, EMG and EEG monitoring) followed by actuator block with mechanical constructions and control electronic.
Influence of damage by neutrons introduced in semi-insulating GaAs detectors is studied by current-voltage measurement and Photo-Induced Current Transient Spectroscopy (PICTS). Significant rise of the reverse current is observed at neutron fluencies exceeding 1013 ncm-2. The PICTS is used for evaluation of deep-level states in detector structures prior and after neutron bombardment. Formation of a...
Due to the economic pressures of internationalized energy market together with rising demand for electrical power, a growing need has been observed in recent years to increase ampere capacity (ampacity) of high voltage overhead transmission line infrastructure. Long construction time, difficult legal procedures and cost considerations encourage the line operators to exploit the wide margins of the...
The core of the paper is the control system with a few electronic blocks (control, actuator, software, and RF wireless communication). The control block drives operations in the system, the wireless block ensures communication, and data transfer, the actuator part is drived by control block. The software drives all operations in the system. Sensors ensure basic information about environment. The number...
This work deals with the performance of thin semi-insulating GaAs-based detectors of ionizing radiation DC-coupled to the low noise readout electronics. Fabricated detector have square shape Ti/Pt/Au Schottky blocking contact with dimension of 0.5 mm and full area AuGeNi eutectic alloy quasi-ohmic contact on the opposite site. The current-voltage characteristic and 241Am pulse-height spectra of the...
The measure system is based on the principle of evaluating the change of an atmospheric pressure. The vertical velocity is derived from the exponential form of the barometric equation which relates the air pressure versus the altitude. The relatively simple method has some drawbacks (a nonlinearity of the exponential dependency of the pressure versus altitude, the air temperature plays a significant...
Miniaturization of biomedical sensors has increased the importance of microsystem technology in medical applications, particularly microelectronics and micromachining. This paper presents a new approach to biomedical monitoring of car driver physiological parameters. The system is based on our preliminary described theory and experiments.
In many applications we need oscillators tunable over a considerable frequency range by simple LC circuits with broadly varying dynamic resistances (quality factor Q of the reactances), while insisting on keeping a rather constant amplitude of the A.C. voltage across the LC circuit, or at least of some output voltage (not necessarily of a harmonic waveform) somewhere in the circuit. If we manage to...
Paper presents wireless powering and signal transfer solution using the inductive coupling. It can be suitable for enclosed systems that are isolated from the surroundings and where the batteries cannot be used. It can be used for biomedical probes, probes bricked in to the wall for long-term monitoring, extreme temperature environment measurement etc. The powering is provided by the near magnetic...
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