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Heterojunction Bipolar Transistors with GaAs base and InGaP emitter have increasingly become important since they have great potential for numerous low- and high-frequency microwave circuit applications due to their high linearity, good reliability and nearly ideal current-voltage characteristics. Current gain and transit time are two important factors for determining the performance of these devices...
The paper deals with the hydrogenated amorphous silicon (a-Si:H) films about 300 nm in thickness prepared by using rf-PECVD with hydrogen dilution R = 10 of the silane source gas in the amorphous growth regime onto clean Corning Eagle 2000 glass substrates at different deposition temperatures ranging from 50 to 200°C. Structural and optical properties of the films were obtained from X-ray diffraction...
In this paper the furnace annealing effects on the titanium silicide formation over a range of temperatures are investigated using physical and chemical measurements. In particular the formation steps and the properties of the interface between TiSi2 and Si have been characterized by mean of Transmission Electron Microscopy. The experiments have been performed with the final aim to obtain Schottky...
The multilayer compound thin films, consisted of metal oxides (TiO2 and NiO) prepared by dc magnetron sputtering technique, have been studied. The structural, compositional, electrical and gas sensing properties have been investigated by XRD, GDOES and Van der Pauw method considering changes in layout, annealing temperature and addition of Au noble metal catalyst. The Au modified compound oxides exhibit...
MIM capacitors with MOCVD-grown RuO2 bottom electrode, ALD-grown TiO2 rutile dielectric and RuO2 and Pt top electrodes were prepared and characterised by the means of C-V and J-V measurements. Dielectric constants were in the range of 140, which correspond to EOT of 0.5 nm and leakage current density as low as 1.5*10-6 A/cm2 was achieved. Strong influence of TiO2 stoichiometry on the leakage currents...
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