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We present GaAs pHEMTs demonstrating output power over 1 W/mm in Ka-band at an operating voltage of 8 V. DC, RF and reliability results are reported. Continuous wave load pull tests at 35 GHz show peak power added efficiency of 52% and associated gain of 8 dB. The saturated output power of 1.2 W/mm is achieved. Power performance improvement is attributed to a new dielectrically defined 0.15 μm gate...
A GaAs low-noise amplifier (LNA) is designed with first-time success using a technique for HEMT modelling which divides the device into intrinsic gate fingers embedded in an analysable metal structure. The gate finger is characterised by de-embedding metallisation from a standard test structure. The device is then re-built, with any geometry or layout that the foundry allows, and modelled by electromagnetic...
Second generation HVHBT GaAs technology developed for use in wireless basestation applications is shown to be suitable for use in symmetric and asymmetric Doherty efficiency enhancement solutions. Each solution demonstrates the unique high efficiency characteristic of HVHBT GaAs technology where average power efficiencies approaching 60% have been achieved in both configurations. This paper will review...
A 300 MHz-16 GHz, Low noise, wideband differential amplifier (active balun) for balanced ultra wideband antennas realized in a commercial low-cost 150 nm GaAs-mHEMT process, is described. The amplifier has demonstrated a differential gain of 25 dB and a common mode rejection of more than 30 dB. A 3-dB bandwidth of 16 GHz is achieved. The measured noise figure is below 1 dB in most of the band. A method...
This article recounts the author's experiences in the period 1972 - 1982, when GaAs ICs were new, technology was still developing, and each new result was the first of its kind.
The design and performance of a 0.15-um PHEMT high efficiency Ka-band power amplifier MMIC is presented. The 3-stage amplifier utilizes a commercially available production released process with demonstrated reliability and 3-metal interconnect (3MI) technology. Experimental continuous wave (CW) in-fixture results for the power amplifier MMIC demonstrate up to 3.8W of saturated output power and 36%...
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