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A fully differential 40 Gsample/s Track and Hold Amplifier with High Dynamic and Large Bandwidth is designed and fabricated in 210 GHz-fT-InP-DHBT process. Spectral measurements in track mode give a THD and a SFDR of -42.5 dB and -43.8 dB respectively for input frequency up to 9 GHz and input voltage up to -2 dBm. This THD is equivalent to 6.7 ENOB. 40 GHz sampling with 2 GHz sinusoidal input signals...
This paper presents a non linear model of HEMT device which operate in multi-bias conditions, that is to say in class-AB, class-B, class-C, class-D and class-S. The model was derived from pulsed I(V), pulsed S parameters and large signals measurements. The aim is to provide to the designers a single model that can be used whatever the operating class, whatever the application referred. It should be...
We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease makes device characteristics improve. This improvements allow to expect to develop a low power cryogenic...
A 3-14 GHz pseudo-differential distributed low noise amplifier, henceforth referred to as the distributed amplifier (DA), is reported. The DA is realized in the WIN PL15-10 process, which is a 0.15 μm Al0.3Ga0.7As/In0.5Ga0.5As low-noise depletion-mode pseudomorphic high electron mobility transistor (pHEMT) process. The DA features 10 pseudo-differential cascode pair unit cells. The chip also features...
Two types of microwave and millimeterwave power detectors realized in a commercial mHEMT MMIC-process is presented for the first time. The detectors are based on either a gate Schottky diode or active mHEMT. Possible application are microwave/millimeterwave power detectors, and multi Gb/s high speed demodulators for OOK, BPSK, QPSK etc.
Results of a Ku band High Power Amplifier (HPA) module demonstrator based on solid state devices for active antenna application is described in this paper. The HPA module based on four combined GaAs monolithic microwave integrated circuits (MMIC's) produces an estimated output power of 39.2 dBm and has shown an estimated Power Added Efficiency (PAE) of 31.5% over 1 GHz frequency band. The power combining...
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