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Engineering materials at the nanoscale by combining controlled nanomaterial synthesis and directed assembly methods offers the potential to create new electronic and optical devices with improved performance and functionality. Semiconductor nanowires have been of particular interest as a model system for studying new physical phenomena arising from their scaled geometries as well as for applications...
The SEDs with relatively long constriction regions invariably exhibit the MTJ characteristics due to the dopant induced potential fluctuation. We clarified that the formation of such uncontrolled MTJs can be avoided by making the constrictions extremely short and with low surface roughness.
The need to reduce power consumption in future logic devices has led to the exploration of different types of logic devices. One of the most attractive new types of logic is one that is based on the collective motion of charges in a semiconductor device. While there are many systems which exhibit exotic collective effects, coupled layer, or pseudospintronic, systems offer exotic physical behavior...
This paper explore the potential of a Metal Insulator Metal gate controlled tunneling Transistor (MIMT) as a high performance device immune to band-to-band tunneling, GIDL, and stochastic channel doping fluctuations. A semi-analytical model was developed and used to guide device optimization. It is shown that the best performance is obtained by increasing the ratio between the permittivity of the...
The modeling of the surface potential and diffusion current of SG MOSFETs with doped channel in the subthreshold region was preformed in this study. The compact models were verified in terms of channel length, fin body width, and body doping concentration at a given VGS and VDS by comparing with the results of the 3-D device simulation, and shown a good agreement with 3-D simulation.
Summary form only given. In this paper, we present groundbreaking results of the simulation of 140,000 well scaled 13nm nChannel bulk MOSFETs, each microscopically different in terms of discrete dopant distributions. These devices were simulated using the well established Glasgow 3D drift/diffusion atomistic simulator. In order to undertake simulations of such a magnitude, we have employed advanced...
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