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This paper proposes a silicon-on-insulator (SOI) photodetector with gold (Au) line and space. (L/S) grating, which enhances light absorption via optical near-field by surface plasmon (SP) around the grating. Behavior of the enhanced light absorption for various grating widths, adjustment of the peak absorption wavelength, and dependence on the polarization of the incident light are discussed based...
A compact model of fully-depleted surrounding-gate (SG) MOSFETs with a doped body is presented. Both the numerical and the analytical models are derived from approximations by a superposition principle of the depletion region and the strong inversion region for the efficiency of the calculation. From those assumptions, the numerical and the analytical center potentials are obtained, and the surface...
This paper explore the potential of a Metal Insulator Metal gate controlled tunneling Transistor (MIMT) as a high performance device immune to band-to-band tunneling, GIDL, and stochastic channel doping fluctuations. A semi-analytical model was developed and used to guide device optimization. It is shown that the best performance is obtained by increasing the ratio between the permittivity of the...
The threshold voltage (Vth) variation in MOSFETs induced by electrical thickness (Tinv) fluctuations due to atomic oxide roughness (AOR) and local gate depletion (LGD) by 3D simulation was demonstrated in this study. It was considered that the impact of Tinv fluctuations on Vth variation is small.
The electrostatics of germanium-channel MOSFETs is often mentioned as an issue for Ge integration in future technology nodes. In this paper we present two original analytical models for Ge MOSFET electrostatics, developed for bulk and Ge-on-insulator (GeOI) architectures. Using these new models, we show that ultrathin GeOI devices present equivalent threshold voltage control as silicon-on-insulator...
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