The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
To cope with the economical and technical demands of the market and to compete with terrestrial networks, satellite operators and manufacturers will need to upgrade their satellites and services. Nowadays, most of commercial satellite payloads are designed for a predetermined service and lack flexibility. Future communication satellites have to become more flexible and shall provide capacity at the...
In this paper we present the main scope and initial results obtained within a pan-European research activity aiming at a successful monolithic integration of innovative RF MEMS switches into a standard GaAs MMIC process technology. Measured results of a fabricated ohmic contact type of RF MEMS switch developed by the OMMIC foundry show promising results e.g. in terms of low RF losses (0.2-0.4 dB is...
We have proposed a novel design of the Doherty power amplifier (PA) to improve the efficiency at a back-off output power level. It is shown that the carrier PA having 100 Omega load impedance is not an optimum for maximizing the efficiency at the back-off level due to the knee voltage effect. Thus, we introduce a Doherty PA having a load impedance larger than 100 Omega when the peaking PA is turned...
A 2.4/3.4 GHz dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1 dB and PAE of dual band PA is 22.4 dBm and 28.8% at 2.4 GHz, and 18.8 dBm and 14.4% at 3.4 GHz, respectively. Also the measured output power at which the achieved EVM is -25 dB is 15 dBm at 2.4 GHz and 12.7 dBm at 3.4 GHz...
This paper proposes novel dual-band matching network, suitable for the design of integrated concurrent dual band power amplifier in a multi-standard radiofrequency frontend. The effectiveness of the proposed dual band matching network was demonstrated through the implementation of a power amplifier operating at 2.4 GHz and 3.5 GHz in IBM 0.13 mum CMOS technology. The designed 1.25 mm times 1.25 mm...
This work proposes a method to enhance the efficiency of a WiMAX switching mode GaN power amplifier through the layout optimization of harmonic matching networks. In the first step, the optimal termination conditions for the inverse class F power amplifier are extracted through load-pull measurement. Afterward, the loss in the multiharmonic output matching network is minimized through layout optimization...
This paper presents a relationship between peak-to-minimum power ratio, PMPR, and pulse-width-modulation, PWM, bandwidth, i.e., the digital PWM sampling frequency. It will be shown that in PWM modulators most important than PAPR is the PMPR figure of merit, since the required modulation bandwidth changes with this relationship considerably. Moreover a closed analysis will be done for well known modulated...
RF-MEMS represent a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch respect to ldquosolid staterdquo technologies. In this paper we demonstrate the possibility to fully integrate the process fabrication of RF-MEMS switches in the GaN-HEMT manufacturing steps to develop a RF-MEMS/MMIC prototype. MEMS RF performance reveals an insertion...
This paper presents first experimental results on high Q MEMS tunable microwave cavity using RF-MEMS switched varactors. MEMS varactors that have been used in this work are based on a dielectric less tunable cantilever actuator, with good reliability and well-established fabrication process. It is shown that one can obtain large Q using type of component, with measured Qu between 550 and 850 for a...
Shifts in the pull-in voltage of electrostatically actuated MEMS capacitive switches were characterized under pulse RF excitation, which allowed the electrical and thermal effects of the RF excitation to be separated. The resulted multiphysics model accurately predicted the pull-in voltage shift under different pulse powers and duty cycles. By comparing the power capacity of switches made of aluminum...
The paper investigates dielectric charging effects for capacitive RF MEMS switches with SiO2 as the dielectric material. Two different actuation schemes are implemented in order to incorporate and better understand the charging history over time. Experimental results indicate that regardless of the actuation scheme the charging is thermally in principle, and that the activation energy decreases as...
The paper presents analyses of the dielectric charging in RF-MEMS devices that have been submitted to electrostatic discharge (ESD) stress. A wafer level Human Body Model (HBM) tester has been used to generate discharge signals. The investigation intends to understand the failure mechanism and the charging mechanism in capacitive RF-MEMS due to ESD. The experiments were done on MEMS and also on Metal-Insulator-Metal...
This paper describes a C-Band T/R Module (TRM) developed by Thales Alenia Space Italia as element of the Electronic Front-End (EFE) for Synthetic Aperture Radar (SAR) antenna developed for Sentinel-1 Program under the responsibility of the European Commission and the European Space Agency in the frame of the Global Monitoring for Environment and Security (GMES). TRM includes Power and Low Noise amplification...
This paper describes a 60 GHz-band MMIC chipset which consists of amplifiers, mixer, and switch, and two modules integrated on multi-layer LTCC substrates for multi beam access point of the wireless broadband communication systems. We are studying the ldquomulti beamrdquo access-point to provide the high speed, secure, and effective wireless link to the wide cover area. To reduce the out-of-band spurious,...
For emerging mm-wave consumer applications such as high data-rate wireless communications at 60GHz and car radar at 76-81GHz, it is important to investigate the impact of module assembly on IC performance. Flip-chip is a promising candidate to meet requirements like low reflections, low insertion loss and low costs for mm-wave applications. This paper addresses the design, modeling and evaluation...
WSP (wafer scale packaging) has come on the market for commercial applications in 2008. But how is a WSP constructed and what are its advantages over traditional surface mount techniques? This paper explores how WSP is applied to traditional GaAs PHEMT wafer manufacture as implemented by Avago Technologies in the first volume commercial offering of WSP in 2008. The paper details the general construction...
HMIC, an acronym for Heterolithic Microwave Integrated Circuits, is fundamentally a wafer level substrate which combines low, RF loss tangent glass with micromachined silicon to produce three dimensional circuitry with the capability to make RF, DC, and thermal vias as the device input and output. Using this technology both active and passive RF devices have been produced which have demonstrated excellent...
Based on the recent discovery of much higher current and voltage capacity of GaAs HBTs under sub-nanosecond isothermal operation, an ultra-wideband pulse-amplifier IC is designed to boost the output power of CMOS pulse generators. The measured output pulse amplitude increases from 1.6 to 11.8 V while the pulse width increases from 0.07 to 0.39 ns. The die size is smaller than 1 mm2. The die cost is...
GaN-based HEMT's have demonstrated better power-frequency performances than other devices using smaller band gap semiconductor materials. Studies have already been realized to evaluate the impact of GaN-based devices at the system level. In this paper, we present the design and the realization of broadband power amplifiers, low noise amplifiers and power switches for future generation of TR-RX modules...
In this paper, a 5.8-GHz amplifier with novel RF electrostatic discharge (ESD) protection is proposed in GaAs 2-mum HBT process. The amplifier incorporates with the ESD devices to form a band pass filter (BPF) structure with good impedance matching for RF ESD protection. In the mean while, an amplifier without ESD protection and another with conventional ESD protection are fabricated in parallel for...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.