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Three different noise models are investigated from physical perspective using hydro-dynamic device simulation of 1D SiGe-HBT. An intuitive noise model formulation is proposed based on the 1st and 2nd order charge partitioning across base-emitter and base-collector regions. It is verified that proposed model improves the modeling of base current noise and correlation between the base and collector...
High-frequency simulations of channel-thermal noise in MOSFETs with gate-lengths of 40 nm, 80 nm, and 110 nm are presented. The simulated noise parameter gamma is a stronger function of the carrier transport model at shorter gate-lengths. Velocity saturation is necessary to produce a good match between the simulated and measured DC I-V characteristics using either the drift-diffusion or hydrodynamic...
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