The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Accurate effective mobility calculations of MOSFETs are necessary when assessing the importance of various performance limiting carrier scattering mechanisms. A novel and simple to use technique to correct for the absence of drain bias during the split CV measurement is presented. Its effectiveness is demonstrated by application to a quasi planar SOI MOSFET at 300 K and 4 K. The lateral field and...
Thanks to both device simulation and ballistic calculation, the concept of apparent mobility is discussed in the case of unstrained and strained nanoscale DG MOSFET. We show that the apparent mobility reduction in simulated short channel devices can be explained by non stationary effects. The apparent mobility is successfully linked to the long-channel mobility and to a ldquoballistic mobilityrdquo...
In this work, we investigate the impact of post-deposition nitridation of the MOCVD HfSiO gate dielectric and the TiN gate electrode thickness on the electrical parameters of SOI multiple-gate FETs (MuGFETs). It is shown that nitridation reduces the EOT, enhances the gate leakage current and reduces the mobility. Although, HfSiON gate dielectric can reduce the work function (WF) sensitivity on the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.