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This paper presents two purposes: 1) the effect of the sputtering power density on AZO and AZOY films by using pulse DC magnetron sputtering technology; 2) the comparison of the differences between AZO and AZOY films optical and electrical properties under different power density. The AZO and AZOY films' resistivity decrease with the increasing of power density; both of them reach 560 μΩcm while the...
The effects of the sputtering thickness and angle of the Pt film on a counter electrode on the efficiency of a dye-sensitized solar cell (DSC) were scrutinized. There has been a research that shows the Pt film thickness had no significant influence on the performance of the DSC. However, we conducted the experiment to get the best sputtering time for the best performance of the DSC. With the sputtering...
Chalchopyrite CIGS thin films were prepared by the two-stage growth technique. The processes were based on the controlled selenization of sputtering metallic precursors with elemental Se vapor in closed space. The modified selenization process by fitting data prevented the substantial losses and the formation of voids from the interior of absorbers. Accordingly, adhesion was improved and the grain...
Two separate series of Mo thin films were deposited on Si/SiO2, and soda lime glass (SLG) substrates using direct-current planar magnetron sputtering, with a sputtering power density of 1.2 W/cm2. The working gas (Ar) pressure was varied from 0.6 mT to 16 mT to gain a better understanding of the effect of sputtering pressure on the morphology and porosity of the Mo thin films and the subsequent effect...
Nanocrystalline silicon (nc-Si:H) is an important material for solar cell applications. Thin films of nc-Si:H can be deposited cost-effectively using chemical vapor deposition (CVD) and sputter deposition. While CVD method offer higher deposition rate and is commonly used in PV industry, microstructural properties (such as hydrogen incorporation, crystallinity, surface morphology, dopant incorporation)...
Cd1−xMgxTe is an attractive II–VI semiconductor alloy candidate for obtaining energy gaps wider than the 1.5 eV of CdTe needed for polycrystalline thin-film tandem cells. Reaching an ideal 1.7 eV bandgap for a doublejunction tandem requires only x≈0.13, and results in only a slight perturbation of the lattice constant from CdTe. Cd1−xMgxTe can be doped either p or n type and is completely miscible...
Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) cells require a highly conducting and transparent electrode for optimum device performance. ZnO:Al films grown from targets containing 2.0 wt.% Al2O3 are commonly used for this purpose. Maximum carrier mobilities of these films grown at room temperature are ∼20–25 cm2V−1s−1. Therefore, relatively high carrier concentrations are required to achieve the desired...
Aluminum-doped zinc oxide (ZnO:Al) is a promising transparent conducting oxide (TCO) for the second generation, thin film based solar cells. Moderately large area, directly textured ZnO:Al films were successfully deposited by reactive-environment, hollow cathode sputtering (RE-HCS) using metal targets. The morphology, structural, electrical, and optical properties of the films have been investigated...
Silicon nitride (SiNx) and Silicon Oxide (SiO2) thin films have been deposited by a new remote plasma deposition system HiTUS (High Target Utilisation Sputtering). The remote plasma geometry allows, pseudo separation of plasma/target-bias parameters, avoiding ion bombardment, and effectively eliminates poisoning, making it an attractive option for stable reactive sputtering of important electronic...
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