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Impedance Spectroscopy Technique (IST) has been employed for the average space charge potential and resistivity measurement at grain boundaries (GBs) in multi-crystalline silicon wafer's. It is found that IST is the most simple and accurate way to obtain space charge potentials developed at grain boundaries in semiconductor devices. In this work the individual and average grain GB measurement is carried...
In a solar cell material, minority carrier dynamics such as diffusion length and lifetime are very important because they strongly influence on solar cell performance. In this study, we proposed a method for diffusion length and lifetime measurements by photo-assisted Kelvin probe force microscopy (P-KFM), and investigated the diffusion length and lifetime distribution around a grain boundary in a...
Polycrystalline Silicon (poly-Si) is widely used for large-volume production of low-cost terrestrial solar cells (SC). Poly-Si grain size and shape essentially determine SC performance and efficiency. In the poly-Si grain, photo-carrier recombination is essentially inhomogeneous and dominates in the region close to the grain boundary (GB). To account for such inhomogeneity, poly-Si was modeled analytically...
We use the combination of high-resolution electron microscopy and density-functional theory to study the atomic structure and electronic effects of grain boundaries in polycrystalline photovoltaic materials such as Si, CdTe, CuInSe2, and CuGaSe2. We find that grain boundaries containing dislocation cores create deep levels in Si, CdTe, and CuGaSe2. Surprisingly, however, they do not create deep levels...
Results on the development of polycrystalline III–V based devices grown by OMVPE on thin metallic foil substrates are presented. It has previously been demonstrated that device quality polycrystalline Ge suitable for OMVPE growth can be produced on metallic foils using a recrystallization process. This work reports on the development of textured metal foil substrates with low misfit grain boundary...
This paper focuses on the influence of the effective intra-grain minority charge carrier diffusion length and surface recombination velocity at grain boundaries on solar cell parameters. Both can be extracted in principle from Light- and Electron Beam Induced Current measurements (LBIC and EBIC). Multicrystalline floatzone (mc FZ) silicon with different grain sizes was processed to solar cells with...
This paper presents deposition and post-deposition processing methods amenable for rapid processing of large area CdTe-based photovoltaic modules. A process optimization rationale is given for superstrate CdS/CdTe solar cells. CdTe films with sub-micron thickness were deposited by vapor transport (VT) on commercially available soda-lime glass substrates and treated in CdCl2 vapor with processing time...
The ambipolar photocarrier diffusion length, Lamb, observed using the steady-state photocarrier grating technique, has been investigated regarding high-growth-rate microcrystalline Si (μc-Si) together with the lateral size, σL, of grain (column) determined from fractal concepts. Experimental results revealed that the relation between Lamb and σL is linear, and the slope, Lamb/σL, being almost unity...
Grain boundaries in multicrystalline silicon material grown from metallurgical feedstock, were investigated in detail using Electron Beam Induced Current (EBIC), Electron Back-Scattered Diffraction (EBSD) and Transmission Electron Microscopy (TEM) techniques. The EBSD analysis showed that small angle grain boundaries, with misorientation angles lower than 2°, gave high EBIC contrast, i.e., high recombination...
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