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The presented work describes behavior of contact structures of Ti/Al type on 6H-SiC N-type prepared by the sputtering technology. Optimal annealing temperature is 1065degC, minimal value of the contact resistivity is 4.89times10-4 Omegacm2. The plasma cleaned substrates produce metallizations with better adhesion and frequently with better morphology. The metallizations with 60 nm thickness of Al...
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