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Thermal wet oxidation of gallium arsenide GaAs (wafers) and gallium nitride GaN (layers from metalorganic vapor phase epitaxy MOVPE and hydride vapor phase epitaxy HVPE) was carried out in N2 as a main gas and H2O as an oxidizing agent. Materials parameters and surface morphology were studied by means x-ray diffraction, ellipsometry, photoreflectance PR, micro Raman spectroscopy, optical microscopy...
Three independent methods show clear evidence that pentacene layers grown on parylene C layer had better molecular microstructure compared to films grown on SiO2 surface. The electrical measurements confirmed these results and carrier mobility of 0.15 cm2 /Vs was obtained in OFET devices.
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