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Experimental electrical property data on silicon grain boundaries (GBs) are reported on a unique sample set consisting of direct silicon bonded (110)/(100) hybrid orientation wafers using C-V, I-V, and MOS capacitance transient techniques. For the relatively clean interfacial bonded GB, the density of GB states NT is on the order of 1012 eV-1cm-2, and the charge neutral level is at ~0.53 eV from the...
ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties...
Different wafer bonding techniques for heterogeneous integration are compared; in particular, the advantages and disadvantages of metal bonding using isothermal solidification (ITS) process are investigated. In applying the ITS metal bonding to Si and GaAs integrated circuits, two distinct approaches - pre-patterning and post-patterning, are developed and the resulting metal bond properties, such...
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