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This paper presents a robust RF front-end for 3.1-4.8-GHz direct-conversion Ultra-wideband (UWB) applications such as the MB-OFDM UWB. The circuits contain a gain controllable low-noise amplifier (LNA) with resistive feedback, a merged quadrature mixer with static current injection, and local oscillator (LO) buffers. Post-layout simulations show that the fully differential front-end achieves a maximum...
A UWB LNA (low noise amplifier) based on 0.35 ??m SiGe BiCMOS technology is presented in this paper. This LNA adopts a resistance feedback topology to optimize the gain and noise figure. The serial inductance at the base is used to matching input impedance and decreasing group delay variation. The simulation results indicate that the gain of LNA reaches 12.5 dB with the variation of 1.9 dB and the...
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