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In this paper, a low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed. We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18 μm 1 poly-6 metal process shows that the UWB LNA achieves 18 dB gain at 3-5 GHz band and 3 dB noise figure, operates from 1.8 V power supply, and dissipates...
In this paper, design approach of 2.4 GHz CMOS ultra low power Low Noise Amplifier (LNA) using 65 nm CMOS technology is presented. Conventional Inductively degenerated cascode topology where both MOS transistors are biased in sub-threshold region is used. There are many performance factors of LNAs such as signal power gain, noise factor, input referred 1-dB compression point (P-1dBin) and power consumption...
A UWB LNA (low noise amplifier) based on 0.35 ??m SiGe BiCMOS technology is presented in this paper. This LNA adopts a resistance feedback topology to optimize the gain and noise figure. The serial inductance at the base is used to matching input impedance and decreasing group delay variation. The simulation results indicate that the gain of LNA reaches 12.5 dB with the variation of 1.9 dB and the...
A wideband full integrated LNA without inductors is designed for low-voltage, low-power applications in 0.13 μm CMOS technology. Based on the common-gate-common-source (CG-CS) topology employing noise canceling, a negative feedback path is introduced between CS and CG paths for low-power operation. The proposed LNA exhibits 23 dB voltage gain, 1.9-2.4 dB noise figure from 500 MHz to 4 GHz while only...
A 1.2 V Frontend intended for use in a Bluetooth receiver has been implemented in a 0.13 um CMOS process. The Frontend comprises a LNA, I/Q mixer and a 1st order active LPF. The presented Frontend is highly integrated with only 7.2 mA current consumption with a 1.2 V supply. The Frontend achieves a voltage gain of 37 dB, 7.55 dB SSB noise figure, -18.4 dBm IIP3 and input return loss of 8 dB at 2.44...
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