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Polycrystal 3C-SiC films have been grown on Si/SiN structures via atmospheric pressure chemical vapor deposition (APCVD) process with a SiH4-C3H8-H2 reaction gas system. The change of SiN microstructure during high temperature pretreatment, and its effect on the crystallinities of SiC growth films were measured using SEM and XRD. Experiment results show that high temperature pretreatment of substrates??...
The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.
LaAlOx with a permittivity of 17 is fabricated successfully by ALD method. Enhanced deposition rate, improved uniformity and self-limiting behavior were observed for LaAlOx compare to La2O3 deposition. The mechanism behind improvement is proposed. ALD LaAlOx is found to be thermally stable up to 850??C anneal. Compared with Al2O3 blocking oxide control samples, the SONOS devices with LaAlOx blocking...
Double active layer OFETs were fabricated, based on two-step vacuum-deposition process. Pentacene deposited at room temperature acted as the active layer, and subsequently, CuPcs was deposited above the pentacene which acted as a protecting layer for the active layer. Due to the same electrical characteristics but different morphology, the bilayer structure was effective to decrease the contamination...
The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs, the lower gate leakage currents, higher breakdown voltages, and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover, the HBTs with oxide passivation possess the characteristics...
65 nm BEOL trench etch is apt to suffer the marginal PR issue. It is a big challenge for trench etch process to simultaneously satisfy the requirements for both metal resistance (Rs) and breakdown Voltage (VBD). The copper surface condition of via bottom is a big concern of trench etch process as well. In this paper, we present several electrical parameter issues that occurred at 65 nm trench etch...
Reactive co-sputtering is employed to prepare HfTiO/GeOxNy and HfTiON/GeOxNy stack gate dielectrics by using wet NO or N2O surface pretreatment. The experimental results show that the wet NO pretreatment can lead to excellent interface properties, gate leakage properties and device reliability, especially for HfTiON/GeOxNy stack gate dielectrics. The involved mechanisms lie in N-barrier role and suitable...
The copper interconnect comes into nanometers with the scaling down of device dimension. At the same time, the resistivity is increasing and the characteristic gets worse. In our paper, an optimal aspect ratio (AR) for Cu-line is found by Monte-Carlo (MC) method so that we can get the optimized electric conductivity and improve the performance of interconnection.
In this paper, charge decay of PECVD SiO2/Si3N4 double layers electrets with different thicknesses of Si3N4 under different environmental conditions was investigated. Single layers of PECVD prepared SiO2 and Si3N4 were also studied. Double layers electrets exhibits better charge stability than single layer under different conditions. As for the double layers with 2 nm-100 nm Si3N4, their charge stability...
Macropore silicon etching with photo-electro-chemistry was carried out under different experimental conditions, including etching voltage, current density and wave length of optical source et al. The surface, diameter of pore and wall of the macropore silicon were observed with Scanning Electronic Microscope (SEM) and Metallographic Microscope. The influencing factors on morphology of pore were analyzed...
In this paper, wafer bonding using Parylene as the adhesive layer is investigated. The experiments are carried out under various conditions in two approaches: Parylene-to-Parylene and Parylene-to-Silicon. By heating at 230??C and applying a bonding force in vacuum environment, both Parylene-Parylene and Parylene-Silicon are successfully bonded. The bonding quality is characterized by the joint area...
In this paper, two types of contact-printing methods for micro/nano-lithography are developed and their application on fabricating high-frequency surface acoustic wave (SAW) devices are investigated. First of all, a light-assisted metal film patterning (LAMP) method which transfers a patterned metal film directly from a silicon mold to a substrate is discussed. The pattern transformation relies on...
Stiction as one of the most failures both in MEMS fabrication and operation has been widely studied. With the decrease in the dimension and material, the ubiquitous surface effect between the device and substrate has become more and more effective. Surface-micromachined structures formed by the wet etching of sacrificial layers are commonly plagued by problems of sticking to the substrate. This paper...
A DNA micro-array based on integrated CMOS active pixel sensor utilizing the opacity of self-assembled nano-metallic particles is demonstrated. Due to the complementary nature of DNA hybridization process, the DNA fragments attached to the nano-particle precipitate them only at locations where complementary DNA strands exist. The opacity of the chip surface change due to accumulation of nano-metallic...
In this paper, we proposed a polysilicon (poly-Si) wire based biosensor for the detection of glucose and matrix metalloproteinase (MMP) extracted from cancer cells. A focus-ion-beam (FIB) processed capillary atomic-force-microscopy (C-AFM) tip was used to help for transferring trace amount of glucose and MMP solutions onto the exact position of the surface of the poly-Si wire sensor. Glucose solution...
Nanostructured titania (NST) is attracting more and more attention due to its porousness and high surface to volume ratio. A novel process to fabricate integrated NST thin film at low temperature (80-90??C) is presented. NST features were formed by oxidizing Ti films in aqueous hydrogen peroxide. The optimal conditions of aqueous oxidation are: 85??C, aqueous 10% H2O2 solution, 20 min of water bath...
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